FDMC8200S
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.016 ohm, 10 V, 2.3 V
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters . The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
- Q1: N-Channel
- Max r DS(on) = 20 m O at V GS = 10 V, ID = 6 A
- Max r DS(on) = 32 m O at V GS = 4.5 V, ID = 5 A
- Q2: N-Channel
- Max r DS(on) = 10 m O at V GS = 10 V, ID = 8.5 A
- Max r DS(on) = 13.5 m O at V GS = 4.5 V, ID = 7.2 A
- RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 23|46 | ||
| 20 | ||
| 30 | ||
| 8 | ||
| 150 °C | ||
| 2.5 | ||
| Power 33 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: