FDB2614
N-Channel PowerTrench® MOSFET 200V, 62A, 27mO
The FDB2614 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 62 | ||
| 27 | ||
| 200 | ||
| 5 | ||
| 3 | ||
| 150 °C | ||
| 260 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |