FAN3216TMX
TTL input, dual inverting output, peak 3A sink, 3A source current Low-Side Gate Driver

- RoHS 10 Compliant
- Tariff Charges
The FAN3216 dual 2 A gate drivers are designed to drive N-channel enhancement-mode MOSFETS in loveside switching applications bv providing switching intervals. They are both available with TTL Oput thresholds. Internal circuitry provides an voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives vhth critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the ctrrent capability driving a single MOSFET. The FAN3216 drivers incorporate MillerDrive architecture for the final output stage. This bipolar- MOSFET combination provides high current during the Miller plateau Stage Of the MOSFET turn-on / turn-off process to minimize switching loss, While providing rail- to-rail voltage swing and reverse current capability. The FAN3216 Offers tm inverting drivers and offers two non-inverting drivers and in a standard 8-pin SOIC package.
- Industry-Standard Pinouts
- 4.5-V to 18-V Operating Range
- 3-A Peak Sinwsource at voo= 12 V
- 2.4-A Sink/ 1.6-A source at 6 V
- Inverting Configuration (FAN3216)
- Internal Resistors Turn Driver Off If NO Inputs
- 12-ns / 9-ns Typical Rise/FaII Tirnes (I nF Load)
- 20-ns Typical Propagation Delay Time Matched Within I ns to the Other Channel
- TTL Input Thresholds
- MillerDrive Technology
- Double Current Capability by Paralleling Channels
- standard SOC-8 Package
- Rated from to -40oC to 125oC Ambient
- Automotive Qualified to AEC-QI (F085 Versions)
Technical Attributes
Find Similar Parts
Description | Value | |
---|---|---|
Full Bridge | ||
Low Side | ||
Low Side | ||
Non-Isolated | ||
NSOIC | ||
TTL | ||
Matte Tin | ||
260 | ||
17 ns | ||
34 ns | ||
22 ns | ||
Surface Mount | ||
MSL 1 - Unlimited | ||
2 | ||
8 | ||
2 | ||
2 | ||
-40 to 125 °C | ||
125 °C | ||
-40 °C | ||
19 ns | ||
8SOIC N | ||
3 A | ||
8 | ||
MOSFET | ||
5 x 4 x 1.5 mm | ||
No | ||
3 A | ||
3 A | ||
SOIC N | ||
18 V | ||
4.5 V |
ECCN / UNSPSC / COO
Description | Value |
---|---|
Country of Origin: | null |
ECCN: | EAR99 |
HTSN: | 8542310001 |
Schedule B: | 8542310000 |