PMPB19XP,115
Trans MOSFET P-CH 20V 10.3A 6-Pin DFN T/R
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 7.2 | ||
| 22.5 mOhm | ||
| 20 | ||
| 900 | ||
| 6 | ||
| 150 °C | ||
| 3.5 | ||
| SOT-1220 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542390001 |
| Schedule B: | 8542390000 |
Factory Lead Time: