PBSS4160PAN,115
Trans GP BJT NPN 60V 1A 6-Pin DFN T/R
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP.
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 V | ||
| 1 A | ||
| 290 | ||
| 6 | ||
| 150 °C | ||
| 2 W | ||
| AEC-Q101 | ||
| SOT-1118 | ||
| Surface Mount | ||
| Dual NPN | ||
| 175 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
Factory Lead Time: