BUK7M45-40EX

BUK7M45-40EX is a standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. It has 6.2nC typ total gate charge, 1.6nC typ gate-source charge, 2.2nC typ gate-drain charge at ID = 5A, VDS = 32V, VGS = 10V, Tj = 25°C). Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control and ultra high performance power switching.

• Repetitive avalanche rated, suitable for thermally demanding environments due to 175°C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175°C
• 40V minimum drain-source breakdown voltage at ID = 250µA, VGS = 0V, Tj = 25°C
• 3V typical gate-source threshold voltage at ID = 1mA, VDS = VGS, Tj = 25°C
• 0.01µA typical drain leakage current at VDS = 40V, VGS = 0V, Tj = 25°C
• 2nA typical gate leakage current at VGS = 20V, VDS = 0V, Tj = 25°C
• 33mohm typical drain-source on-state resistance at VGS = 10V, ID = 5A, Tj = 25°C
• Junction temperature range from -55 to 175°C
• 0.86V typical source-drain voltage at IS = 5A, VGS = 0V, Tj = 25°C
• 10.6ns reverse recovery time at IS = 5A, dIS/dt = -100A/µs, VGS = 0V, VDS = 25V, Tj= 25°C