BST82,215
Trans MOSFET N-CH 100V 0.19A 3-Pin TO-236AB T/R
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Saves PCB space due to small footprint
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 190 | ||
| 10 | ||
| 100 | ||
| 2 | ||
| 3 | ||
| 150 °C | ||
| 830 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412100 |
| Schedule B: | 85412100 |
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