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IS62WV102416EBLL-45BLI-TR

SRAM Chip Async Single 3.3V 16M-Bit 1M x 16 45ns 48-Pin VFBGA T/R

Official logo for ISSI
Manufacturer:ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS62WV102416EBLL-45BLI-TR
Secondary Manufacturer Part#: IS62WV102416EBLL-45BLI-TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The IS62WV102416EBLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. When CS1\ is HIGH (deselected) or when CS2\ is low (deselected) or when CS1\ is low , CS2\ is high and both LB\ and UB\are HIGH, the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable WE\ controls both writing and reading of the memory. A data byte allows Upper Byte UB\ and Lower Byte LB\ access. The IS62WV102416EBLL are packaged in the JEDEC standard 48-pin BGA (6mm x 8mm) .

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
  • Operating (typical)
    • 10.8mW (1.8V), 18mW (3.0V)
    • CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V) TTL compatible interface levels
  • Single power supply: 2.2V-3.6V Vdd
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support

Technical Attributes

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Description Value
20 Bit
16 Mbit
Tin-Silver-Copper
260
12 mA
45 ns
16 Mbit
Surface Mount
MSL 3 - 168 hours
48
16 Bit
16 Bit
1
1 MWords
-40 to 85 °C
85 °C
-40 °C
48VFBGA
48
6 x 8 x 0.7(Max)
No
Industrial
VFBGA
3.3 V
Asynchronous
3.3000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 70 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $: