IS61WV25616EDBLL-10TLI
SRAM, Asynchronous SRAM, 4 Mbit, 256K x 16bit, TSOP-II, 44 Pins, 2.4 V
The ISSI IS61WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61WV25616EDBLL is packaged in the JEDEC standard 44-pin TSOP-II and 48-pin Mini BGA (6mm x 8mm).
- High-speed access time: 8, 10 ns
- Low Active Power: 85 mW (typical)
- Low Standby Power: 7 mW (typical) CMOS standby
- Single power supply
- Vdd 2.4V to 3.6V (10 ns)
- Vdd 3.3V ± 10% (8 ns)
- Fully static operation: no clock or refresh required
- Three state outputs
- Data control for upper and lower bytes
- Industrial and Automotive temperature support
- Lead-free available
- Error Detection and Error Correction
Technical Attributes
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| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 4 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 35 mA | ||
| 10 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52(Max) x 10.29(Max) x 1.05(Max) | ||
| No | ||
| Industrial | ||
| TSOP-II | ||
| 3.6 V | ||
| 2.4 V | ||
| 3.3 V | ||
| 2.5, 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | 3A991.b.2.a |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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