IS43DR16640C-3DBLI
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA
The IS43DR16640C 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.
- Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
- WRITE latency = READ latency - 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
- Configuration(s):64Mx16 (8Mx16x8 banks): IS43DR16640C
- Package: x16: 84-ball WBGA (8mm x 12.5mm)
- Temperature Range: Commercial (0°C = Tc = 85°C) Industrial (-40°C = Tc = 95°C; -40°C = Ta = 85°C)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 Bit | ||
| 333 MHz | ||
| 16 Bit | ||
| 1 Gbit | ||
| DDR2 SDRAM | ||
| Tin-Silver-Copper | ||
| 260 °C | ||
| 333 MHz | ||
| 105 mA | ||
| 0.45 ns | ||
| 1 Gbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 84 | ||
| 8 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1.8000 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 64M x 16 | ||
| 84TWBGA | ||
| 84 | ||
| 8 x 12.5 x 0.8(Max) | ||
| Industrial | ||
| 1.8 V | ||
| DDR2 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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