IS42S32200L-6TLI-TR
DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II T/R
ISSI's 64Mb Synchronous DRAM IS42/45S32200L isorganized as 524,288 bits x 32-bit x 4-bank for improvedperformance.ThesynchronousDRAMsachievehigh-speeddata transfer using pipeline architecture.
- Clock frequency: 200, 166, 143, 133 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single 3.3V power supply
- LVTTL interface
- Programmable burst length: (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Self refresh modes
- 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 11 Bit | ||
| 166 MHz | ||
| 32 Bit | ||
| 64 Mbit | ||
| Matte Tin | ||
| 260 | ||
| 166 MHz | ||
| 100 mA | ||
| 5.4 ns | ||
| 64 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 86 | ||
| 4 | ||
| 32 Bit | ||
| 32 Bit | ||
| 5 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 2M x 32 | ||
| 86TSOP-II | ||
| 86 | ||
| 22.22 x 10.6 x 1 | ||
| Industrial | ||
| TSOP-II | ||
| 3.3 V | ||
| SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542320002 |
| Schedule B: | 8542320015 |