GLS27SF010-70-3C-NHE

The GLS27SF010 are a 64K x8 / 128K x8 / 256K x8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. These MTP devices can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply. They have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide memories.

Featuring high-performance Byte-Program, the GLS27SF5010 provide a Byte-Program time of 20 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years.

The GLS27SF010 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility, efficiency, and performance while matching the low cost in nonvolatile applications that currently use UV-EPROMs, OTPs, and mask ROMs.

• Organized as 64K x8 / 128K x8 / 256K x8
• 4.5-5.5V Read Operation
• Superior Reliability
  • Endurance: At least 1000 Cycles
  • Greater than 100 years Data Retention
• Low Power Consumption
  • Active Current: 20 mA (typical)
  • Standby Current: 10 µA (typical)
• Fast Read Access Time
  • 70 ns
• Fast Byte-Program Operation
  • Byte-Program Time: 20 µs (typical)
  • Chip Program Time: 2.8 seconds (typical) for GLS27SF010
• Electrical Erase Using Programmer
  • Does not require UV source
  • Chip-Erase Time: 100 ms (typical)
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EPROM Pinouts
• Packages Available
  • 32-lead PLCC
  • 32-lead TSOP (8mm x 14mm)
  • 32-pin PDIP for GLS27SF010/020
• All non-Pb (lead-free) devices are RoHS compliant