DMP3099L-13

DMP3099L-13 is a P-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include backlighting, power-management functions, DC-DC converters.

• Low gate threshold voltage, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source voltage is -30V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Drain current is -3.8A at TA = +25°C, steady state, TA = +25°C
• Pulsed drain current is -11A at TA = +25°C
• Total power dissipation is 1.08W
• Static drain-source on-resistance is 65mohm max at VGS = -10V, ID = -3.8A, TA = +25°C
• SOT23 (standard) package
• Operating and storage temperature range from -55 to +150°C