DMP10H4D2S-7

DMP10H4D2S-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.

• Low gate threshold voltage, low input capacitance, fast switching speed
• Small surface-mount package, ESD protected up to 2KV (HBM)
• Drain-source voltage is -100V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is -0.27A at TA = +25°C, VGS = -10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is -1A at TA = +25°C
• Total power dissipation is 0.38W at TA = +25°C
• Maximum body diode forward current is -4A at TA = +25°C
• SOT23 (standard) package
• Operating and storage temperature range from -55 to +150°C