DMN6140L-7

DMN6140L-7 is a 60V N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include DC-DC converters, power management functions and analogue switch.

• Low on-resistance, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source breakdown voltage is 60V min at VGS = 0V, ID = 250µA, TA = +25°C
• Zero gate voltage drain current is 1µA max at VDS = 60V, VGS = 0V, TA = +25°C
• Gate-source leakage is ±100nA max at VGS = ±20V, VDS = 0V,TA = +25°C
• Static drain-source on-resistance is 92mohm typ at VGS = 10V, ID = 1.8A, TA = +25°C
• Diode forward voltage is 0.75V typ at VGS = 0V, IS = 0.45A, TA = +25°C
• Reverse recovery time is 16.8ns typ at IF = 1.8A, di/dt =100A/µs, TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C