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DMG6601LVT-7

Name: DMG6601LVT-7
Brand: Diodes Incorporated
SKU: DMG6601LVT-7
Availability: InStock

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm

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Manufacturer:Diodes Incorporated

Product Category: 分立器件, 场效应管, MOSFET阵列

Avnet Manufacturer Part #: DMG6601LVT-7

Secondary Manufacturer Part#: DMG6601LVT-7

RoHS 10 Compliant
Tariff Charges

Description

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed

Technical Attributes

Find Similar Parts

	Description	Value
	Channel Type	Complementary
	Continuous Drain Current Id N Channel	3.8 A
	Continuous Drain Current Id P Channel	2.5 A
	Drain Source On State Resistance N Channel	55 Ohm
	Drain Source On State Resistance P Channel	110 Ohm
	Drain Source Voltage Vds N Channel	30 V
	Drain Source Voltage Vds P Channel	30 V
	No. of Pins	6
	Operating Temperature Max	150 °C
	Power Dissipation N Channel	1.3 W
	Power Dissipation P Channel	1.3 W
	Transistor Case Style	TSOT-26