DMG3406L-7

DMG3406L-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include battery charging, power management functions, DC-DC converters, and portable power adapters.

• Low on-resistance, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source voltage is 30V at TA=+25°C
• Gate-source voltage is ±20V at TA=+25°C
• Continuous drain current is 3.6A at TA=+25°C, steady state, VGS=10V
• Pulsed drain current (pulse width = 10µS, duty cycle = 1%) is 30A at TA=+25°C
• Maximum body diode forward current is 1.4A at TA=+25°C
• Power dissipation is 0.77W
• SOT23 case
• Operating and storage temperature range from -55 to +150°C