Infineon CoolSiC™ 1200 V discrete MOSFETs in TO247 three-pin and four-pin packages to address the fast-growing demand for energy-efficient SiC solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), motor drives and industrial powers supplies. The new discrete portfolio is rated from 30 mΩ up to 350 mΩ and fits for 3-phase power systems ranging from about 1 kW to 80 kW.
Silicon carbide (SiC) CoolSiC™ MOSFET discrete ideally suited for hard- and resonant-switching topologies
CoolSiC™ SiC MOSFETs in discrete packages build on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The temperature-independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC™ MOSFETs in discrete packages ideal for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects enables a benchmark low dynamic loss even at zero volt turn-off voltage in bridge topologies.
Features
- Ultra-low switiching losses
- Threshold-free on state characteristic
- Wide gate-source voltage range
- Benchmark gate threshold voltage, Vgs(th) =4.5V
- 0V turn-off gate votlage for easy and simple gate drive
- Fully controllable dV/dt
- Robust body diode for hard commutation
- Temperature independent turn-off switching losses
- Sense pin for optimized switching performance
Target applications
- EV charging
- Energy storage
- Power supplies
- Motor control and drives
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost