650V Power SiC Merged Pin Schottky Diode ( TO220, TO247 package)
Mainly used in power market and used in PFC or output circuit, which is helpful for efficiency incresing and provide stability under high temperature . It also is helpful for space-saving.
SIC having low on resistance , can support high speed hard switch action in high tempertaure and can suit big current application .That is widdely used in power application
4~20A, 650V Power SiC Merged Pin Schottky Diode by TO220 pacakage and 16~40A, 650V Power SiC Merged Pin Schottky Diode by TO247 package
Features
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Positive Vf temperature coefficient for easy parallleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behavior
- 175°C maxinum operating juntion temperature
- MPS structure for high ruggedness to forward current events
- Meets JESD 201 class 1A whisker test
- Solder Bath temperature 275°C Maximum , 10 s per JESD 22-B106
Applications
- Wide Band gap Sic based 650V Schottky diode, designed for High perfprmance and ruggedness
- Optinumchoice for high speed hard switching and efficient operation over a wide teperature range, it is also recommended for all applications suffering form Silicon ultrasfast recover behavior
- Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
