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MG800FXF2YMS3

SiC MOSFET Modules

MG800FXF2YMS3

Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT) which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.

We are developing modules with a newly developed SiC MOSFET/SBD chip that realizes low parasitic inductance while adopting industry-standard packages. These modules apply photovoltaic inverters, industrial inverters, inverters and converters for railway vehicles, etc., and contributes to miniaturization and weight reduction of industrial equipment by high-speed switching and low-loss operation.


Features

  • The SiC MOSFET modules have been developed for high current and high voltage applications
  • By employ Third-generation SiC-MOSFET chips to achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage.
  • The high heat tolerance and low inductance package brings out the performance of SiC sufficiently.


Applications

  • Inverters and converters for railway vehicles,
  • Photovoltaic inverters
  • Industrial motor drives


Key Components

  • Industrial SiC Module


Product detail

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