Silicon-carbide (SiC) Power Devices
Silicon-carbide (SiC) Power Devices
ROHM is at the forefront in the development of SiC power devices and modules that offer improved power-savings in applications across a number of industries.
Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity. ROHM’s broad portfolio includes SiC Schottky barrier diodes (SBDs), SiC MOSFETs, full SiC power modules (integrating SiC SBDs and MOSFETs), and high heat-resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.
Features
- Ultra Low Noise, High PSRR
- Stable at 1µF ceramic input and output capacitors
- Standby Mode that is controlled by Enable pin
- Dropout Voltage: 200mV (at 500mA load)
- Under Voltage Lockout Protection, Current Limit and Short Circuit Protection, Thermal Shutdown Protection
Applications
- High-efficiency inverters in DC/AC converters for solar and wind power
- Power converters for electric and hybrid vehicles
- Power inverters for industrial equipment and air conditioners
- High-voltage switches for X-ray generators
- Thin-film coating processes
