Wide band gap technology
Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle.
The Wide Band Gap (WBG) materials will power future applications for high performance in areas such as vehicle electrification, solar and wind power, cloud computing, EV (electric vehicle) charging, 5G communications and many more. ON Semiconductor is contributing to the development of universal standards to help advance the adoption of Wide Band Gap (WBG) power technologies.
Features
Wide Band Gap technologies provide advanced performance:
- Faster switching
- Lower power losses
- Increased power density
- Higher operating temperatures
This performance is aligned with future market demands and trends:
- Higher efficiency
- Compact solutions
- Lower weight
- Reduced system cost
- Increased reliability
ON Semiconductor provides a unique Ecosystem focused around WBG solutions
- SiC Diodes geared towards ruggedness
- SiC MOSFETs geared towards ruggedness and speed
- Drivers designed for WBG devices
- FIT (Flexible Interface Technology) design modeling of SiC and GaN power devices
Applications
- Solar and wind power
- Vehicle electrification
- Motor drive
- Cloud computing
- EV charging
- 5G communication
