MT28EW128ABA1HPC-0SIT | Micron 閃存 | Avnet Asia Pacific

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MT28EW128ABA1HPC-0SIT

Flash Memory, Parallel NOR, 128 Mbit, 16M x 8bit, 8M x 16bit, CFI, Parallel, 64 Pins, LBGA

Micron
製造商: Micron
產品分類: 記憶體, 閃存
替代料號: MT28EW128ABA1HPC-0SIT
RoHS 10 Compliant

MT28EW128ABA1HPC-0SIT is a parallel NOR flash embedded memory. It is an asynchronous, uniform block, parallel NOR Flash memory device. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.

技術參數

  • Voltage range from 2.7 to 3.6V VCC core, 128Mb density, single die stack, 2nd generation
  • Die Rev A, x8, x16 configuration, high lock block structure, standard default security
  • Single-level cell (SLC) process technology
  • Supply voltage range from 2.7 to 3.6V (program, erase, read), 1.65 - VCC (I/O buffers)
  • Page size: 16 words or 32 bytes, page access: 20ns, random access: 70ns (VCC = VCCQ = 2.7-3.6V)
  • 2.0MB/s (TYP) when using full buffer program, 2.5MB/s (TYP) when using accelerated buffer program
  • Word/Byte program: 25us per word (TYP), block erase (128KB): 0.2s (TYP)
  • Read from another block during a PROGRAM SUSPEND operation
  • Unlock bypass, block erase, chip erase, and write to buffer capability
  • 64-ball LBGA package, ambient operating temperature range from -40°C to +85°C

技術屬性

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描述
接口 Parallel
引腳數 64
存儲密度 128 Mbit
最大電源電壓 3.6 V
集成電路貼裝 Surface Mount
集成電路外殼/封裝 64/64 LBGA 11x13x1.4
存取時間 95 ns
最小電源電壓 2.7 V
額定電源電壓 3 V
最高工作溫度 85 °C
最低工作溫度 -40 °C
閃存類型 NOR

ECCN/UNSPSC

描述
ECCN: EAR99
計劃交貨期 B: 8523510000
HTSN: 8542320051
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