製造商:
ISSI
IS42S32400F-7BLI
DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin W-BGA
替代料號:
IS42S32400F-7BLI
RoHS 6 Compliant
NCNR
Obsolete
ISSI's 128Mb Synchronous DRAM achieves high-speeddata transfer using pipeline architecture. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4Banks.
技術參數
- Clock frequency: 166, 143, 133 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single Power supply: 3.3V + 0.3V
- LVTTL interface
- Programmable burst length
- (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Auto Refresh (CBR)
- Self Refresh
- 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
技術屬性
查找類似的料號|
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描述 | 值 |
|---|---|---|
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時鐘頻率最大值 | 143 MHz |
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集成電路貼裝 | Surface Mount |
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最高工作溫度 | 85 °C |
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集成電路外殼/封裝 | WBGA |
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最低工作溫度 | -40 °C |
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引腳數 | 90 |
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額定電源電壓 | 3.3 V |
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存儲密度 | 128 Mbit |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | PARTS... |
| HTSN: | PARTS... |