ZXTN2007GTA by Diodes Incorporated Single Bipolar Transistors | Avnet Asia Pacific

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ZXTN2007GTA

Trans GP BJT NPN 30V 7A 4-Pin(3+Tab) SOT-223 T/R

ZXTN2007GTA in Single Bipolar Transistors by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: ZXTN2007GTA
RoHS 10 Exempt

Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

Key Features

  • Extremely low equivalenton-resistance; RSAT = 28Ωm at 6.5A
  • 7 amps continuous current
  • Up to 20 amps peak current
  • Very low saturation voltages
  • Excellent hFE characteristics up to 20 amps

Technical Attributes

Find Similar Parts
Description Value
Power Dissipation 3
MSL Level MSL 1 - Unlimited
Operating Temperature Max 150
Transition Frequency 140
Collector Emitter Voltage Max 30
No. of Pins 4
DC Current Gain hFE Min 100
Transistor Polarity NPN
Transistor Case Style SOT-223
Transistor Mounting Surface Mount
Continuous Collector Current 7

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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Documents

Title Download Type Date Published
DIO-PCN-2235REV00 PCN Other-Documents 20160109
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