Inactivity Warning Dialog
The 110 °C rated VO618A feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6 and 8. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.
Key Features
|
Description | Value |
---|---|---|
|
Maximum Current Transfer Ratio @ Current | 200@1mA % |
|
Pin Count | 4 |
|
Input Current | 60 mA |
|
Supplier Package | PDIP SMD |
|
Input Type | DC |
|
Number of Channels per Chip | 1 |
|
Output Type | DC |
|
Max Processing Temp | 260 |
|
Maximum Collector Emitter Saturation Voltage | 400 V |
|
Operating Temperature | -55 to 110 °C |
|
Maximum Collector Current | 50 mA |
|
Channel Type | N |
|
Product Dimensions | 4.58 x 6.5 x 3.5 mm |
|
Minimum Isolation Voltage | 5000 Vrms |
|
Maximum Collector Emitter Voltage | 80 V |
|
Mounting | Surface Mount |
|
Maximum Power Dissipation | 150 mW |
|
Lead Finish | Tin |
Description | Value |
---|---|
ECCN: | EAR99 |
SCHEDULE B: | PARTS... |
HTSN: | PARTS... |