SMBT3906DW1T1G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

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SMBT3906DW1T1G

Trans GP BJT PNP 40V 0.2A 6-Pin SC-88 T/R

SMBT3906DW1T1G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: SMBT3906DW1T1G
RoHS 10 Compliant

The Dual PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.

Key Features

  • hFE, 100-300
  • Low VCE(sat), ≤ 0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
  • Device Marking: MBT3906DW1T1 = A2
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Technical Attributes

Find Similar Parts
Description Value
DC Current Gain hFE Min PNP 100
Collector Emitter Voltage PNP Max 40
Operating Temperature Max 150
Transistor Case Style SOT-363
Transistor Polarity Dual PNP
Continuous Collector Current PNP 200
Transistor Mounting Surface Mount
Power Dissipation PNP 150
No. of Pins 6
MSL Level MSL 1 - Unlimited
Transition Frequency PNP 250

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095
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