SIA421DJ-T1-GE3 by Vishay Single MOSFETs | Avnet Asia Pacific

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SIA421DJ-T1-GE3

Power MOSFET, P Channel, 30 V, 1 A, 0.056 ohm, SC-70, Surface Mount

SIA421DJ-T1-GE3 in Single MOSFETs by Vishay
Vishay
Manufacturer: Vishay
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: SIA421DJ-T1-GE3
RoHS 10 Compliant

Power MOSFET, P Channel, 30 V, 1 A, 0.056 ohm, SC-70, Surface Mount

Key Features

  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
    • Low On-Resistance

Technical Attributes

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Description Value
Operating Temperature Max 150
Rds(on) Test Voltage 10
Power Dissipation 19
Transistor Mounting Surface Mount
Drain Source Voltage Vds 30
Transistor Case Style PowerPAK SC70
Continuous Drain Current Id 12
Drain Source On State Resistance 35
Channel Type P
No. of Pins 6

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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