SI7858BDP-T1-GE3 by Vishay Single MOSFETs | Avnet Asia Pacific

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SI7858BDP-T1-GE3

N-CHANNEL 12-V (D-S) MOSFET

SI7858BDP-T1-GE3 in Single MOSFETs by Vishay
Vishay
Manufacturer: Vishay
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: SI7858BDP-T1-GE3
RoHS 10 Compliant

N-CHANNEL 12-V (D-S) MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % Rg Tested
  • 100 % UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Technical Attributes

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Description Value
Rds(on) Test Voltage 4.5
Operating Temperature Max 150
Continuous Drain Current Id 40
Drain Source On State Resistance 2.5
Transistor Case Style PowerPAK SO
Power Dissipation 48
Drain Source Voltage Vds 12
Transistor Mounting Surface Mount
No. of Pins 8
Channel Type N
MSL Level MSL 1 - Unlimited

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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