Manufacturer:
Vishay
SI1062X-T1-GE3
Power MOSFET, N Channel, 20 V, 530 mA, 0.35 ohm, SC-89, Surface Mount
Avnet Manufacturer Part #:
SI1062X-T1-GE3
RoHS 10 Compliant
Power MOSFET, N Channel, 20 V, 530 mA, 0.35 ohm, SC-89, Surface Mount
Key Features
- TrenchFET® Power MOSFET
- Gate-Source ESD Protected: 1000 V
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Product Range | TrenchFET Series |
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No. of Pins | 3 |
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Channel Type | N Channel |
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Transistor Mounting | Surface Mount |
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Rds(on) Test Voltage | 4.5 |
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Operating Temperature Max | 150 °C |
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Drain Source Voltage Vds | 20 V |
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Gate Source Threshold Voltage Max | 1 V |
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Transistor Case Style | SC-89 |
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Drain Source On State Resistance | 420 mOhm |
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Power Dissipation | 220 mW |
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Continuous Drain Current Id | 530 mA |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541210095 |