Manufacturer:
Vishay
SI1016CX-T1-GE3
COMPLEMENTARY N & P-CH 20-V (D-S) MOSFET
Avnet Manufacturer Part #:
SI1016CX-T1-GE3
RoHS 10 Compliant
COMPLEMENTARY N & P-CH 20-V (D-S) MOSFET
Key Features
- TrenchFET® power MOSFETs
- High-side switching
- Ease in driving switches
- Low offset (error) voltage
- Low-voltage operation
- High-speed circuits
- Typical ESD protection: n-channel 900 V, p-channel 900 V (HBM)
- 100 % Rg tested
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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Drain Source Voltage Vds N Channel | 20 |
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Continuous Drain Current Id N Channel | 0.6 |
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Continuous Drain Current Id P Channel | 0.6 |
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Drain Source Voltage Vds P Channel | 20 |
|
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Channel Type | Dual N|P |
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MSL Level | MSL 1 - Unlimited |
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No. of Pins | 6 |
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Drain Source On State Resistance P Channel | 756 |
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Power Dissipation P Channel | 220 |
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Power Dissipation N Channel | 220 |
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Drain Source On State Resistance N Channel | 396 |
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Transistor Case Style | SOT-563 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
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