PSMN4R0-30YLDX by Nexperia Single MOSFETs | Avnet Asia Pacific

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PSMN4R0-30YLDX

Trans MOSFET N-CH 30V 95A 4-Pin LFPAK-56 T/R

PSMN4R0-30YLDX in Single MOSFETs by Nexperia
Nexperia
Manufacturer: Nexperia
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: PSMN4R0-30YLDX
RoHS 6 Compliant

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Key Features

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology;Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Max 175
Rds(on) Test Voltage 10
Transistor Case Style SOT-669
Continuous Drain Current Id 95
Power Dissipation 64
Channel Type N
Drain Source On State Resistance 4
Transistor Mounting Surface Mount
No. of Pins 4
MSL Level MSL 1 - Unlimited
Drain Source Voltage Vds 30

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541290080
HTSN: 8541290075

Documents

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Documents

Title Download Type Date Published
SPICE thermal model Technical-Specifications 20130605
NXP-201606004I PCN Other-Documents 20160109
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