PN2222ATFR by onsemi Single Bipolar Transistors | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

PN2222ATFR

Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 625 mW, TO-226AA, Through Hole

PN2222ATFR in Single Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: PN2222ATFR
RoHS 10 Compliant

The PN2222ATFR is a 40V NPN Bipolar (BJT) Single Transistor for use as a medium power amplifier and switch requiring collector currents up to 500mA. This product is general usage and suitable for many different applications.

Key Features

  • 75V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 83.3°C/W Thermal resistance, junction to case
  • 200°C/W Thermal resistance, junction to ambient
  • 60ns Fall time (TA = 25°C)

Technical Attributes

Find Similar Parts
Description Value
Operating Temperature Max 150
Transition Frequency 300
Transistor Mounting Through Hole
Continuous Collector Current 600
Collector Emitter Voltage Max 40
No. of Pins 3
DC Current Gain hFE Min 100
Transistor Case Style TO-92
Transistor Polarity NPN
Power Dissipation 625

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095

Documents

Please log in to view more information.
Add To Bom

Documents

Title Download Type Date Published
Qualification of ON Semiconductor Seremban ISMF FAB (Malaysia) and transfer of Assembly and Test Site on Small Signal Transistor packages in TO-92 from AUKD (China) to JCET (China). PCN-Documentation 20210106
PN2222ATFR 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM Part-Block-Diagram 20021119
Qualification of ON Semiconductor ISMF FAB (Malaysia) and transfer of Assembly and Test Site PCN-Documentation 20201117
CLEAR ALL Compare (0/10)