Manufacturer:
Nexperia
PMV45EN2R
Power MOSFET, N Channel, 30 V, 5.1 A, 0.035 ohm, SOT-23, Surface Mount
Avnet Manufacturer Part #:
PMV45EN2R
RoHS 6 Compliant
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Logic level compatible
- Very fast switching
- Trench MOSFET technology
- Enhanced power dissipation capability of 1115 mW
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Channel Type | N |
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Rds(on) Test Voltage | 10 |
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Continuous Drain Current Id | 4.1 |
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Power Dissipation | 1.115 |
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Transistor Mounting | Surface Mount |
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Drain Source Voltage Vds | 30 |
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Drain Source On State Resistance | 42 |
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Transistor Case Style | SOT-23 |
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No. of Pins | 3 |
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MSL Level | MSL 1 - Unlimited |
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Operating Temperature Max | 150 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210075 |