Manufacturer:
Nexperia
PMN30XPX
Power MOSFET, Trench, P Channel, 20 V, 5.2 A, 0.03 ohm, SOT-457, Surface Mount
Avnet Manufacturer Part #:
PMN30XPX
RoHS 10 Compliant
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 1400 mW
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Channel Type | P |
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Operating Temperature Max | 150 |
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Rds(on) Test Voltage | 4.5 |
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No. of Pins | 6 |
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Transistor Mounting | Surface Mount |
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Drain Source Voltage Vds | 20 |
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Drain Source On State Resistance | 34 |
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Continuous Drain Current Id | 5.2 |
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Transistor Case Style | SOT-457 |
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Power Dissipation | 1.4 |
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MSL Level | MSL 1 - Unlimited |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210075 |