Manufacturer:
Nexperia
PMDXB600UNEZ
Transistor MOSFET Array Dual N-CH 20V 600mA 8-Pin DFN1010B-6 T/R
Avnet Manufacturer Part #:
PMDXB600UNEZ
RoHS 6 Compliant
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection > 1 kV HBM
- Drain-source on-state resistance RDSon = 470 mΩ
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
|
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Operating Temperature Max | 150 |
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Drain Source Voltage Vds N Channel | 20 |
|
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Drain Source On State Resistance N Channel | 620 |
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Power Dissipation N Channel | 380 |
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MSL Level | MSL 1 - Unlimited |
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No. of Pins | 8 |
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Channel Type | Dual N |
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Transistor Case Style | SOT-1216 |
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Continuous Drain Current Id N Channel | 600 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210075 |