Manufacturer:
Nexperia
PMCPB5530X115
Trans MOSFET N/P-CH 20V 4A T/R
Avnet Manufacturer Part #:
PMCPB5530X,115
RoHS 6 Compliant
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Key Features
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
Technical Attributes
Find Similar Parts|
|
Description | Value |
|---|---|---|
|
|
Operating Temperature Max | 150 |
|
|
Drain Source On State Resistance N Channel | 34 |
|
|
Continuous Drain Current Id N Channel | 4 |
|
|
Power Dissipation P Channel | 1.17 |
|
|
Drain Source Voltage Vds P Channel | 20 |
|
|
Channel Type | Dual N|P |
|
|
MSL Level | MSL 1 - Unlimited |
|
|
Transistor Case Style | SOT-1118 |
|
|
No. of Pins | 6 |
|
|
Continuous Drain Current Id P Channel | 4 |
|
|
Drain Source On State Resistance P Channel | 70 |
|
|
Power Dissipation N Channel | 1.17 |
|
|
Drain Source Voltage Vds N Channel | 20 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210075 |