PBHV9050T215 by Nexperia Single Bipolar Transistors | Avnet Asia Pacific

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PBHV9050T215

Trans GP BJT PNP 500V 0.15A 3-Pin TO-236AB T/R

PBHV9050T215 in Single Bipolar Transistors by Nexperia
Nexperia
Manufacturer: Nexperia
Avnet Manufacturer Part #: PBHV9050T,215
RoHS 10 Compliant

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PMBTA45.

Key Features

  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • AEC-Q101 qualified

Technical Attributes

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Description Value
Operating Temperature Max 150
Transistor Mounting Surface Mount
DC Current Gain hFE Min 80
Transition Frequency 50
Continuous Collector Current 150
Collector Emitter Voltage Max 500
Transistor Polarity PNP
No. of Pins 3
Transistor Case Style SOT-23
MSL Level MSL 1 - Unlimited
Power Dissipation 300

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541100080
HTSN: 8541100080
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