Manufacturer:
Nexperia
PBHV8560ZX
Trans GP BJT NPN 600V 0.5A 4-Pin SOT-223 T/R
Avnet Manufacturer Part #:
PBHV8560ZX
RoHS 6 Compliant
NPN high-voltage low Vcesat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z
Key Features
- Low collector-emitter saturation voltage Vcesat
- High collector current capability
- High collector current gain hfe at high Ic
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
|
|
Power Dissipation | 1.4 |
|
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Collector Emitter Voltage Max | 600 |
|
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DC Current Gain hFE Min | 70 |
|
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Operating Temperature Max | 150 °C |
|
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Transistor Case Style | SOT-223 |
|
|
Continuous Collector Current | 500 |
|
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Transistor Polarity | NPN |
|
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Qualification | AEC-Q101 |
|
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Transistor Mounting | Surface Mount |
|
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No. of Pins | 4 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| WITHDRAWAL notice | PCN-Documentation | 20200216 |