NX3008CBKS115 by Nexperia MOSFET Arrays | Avnet Asia Pacific

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NX3008CBKS115

MOSFET Array, Complementary N and P Channel, 30 V, 30 V, 350 mA, 200 mA, 1.4 Ohm, 4.1 Ohm, SOT-363, 6 Pins

NX3008CBKS115 in MOSFET Arrays by Nexperia
Nexperia
Manufacturer: Nexperia
Product Category: Discretes, FETs, MOSFET Arrays
Avnet Manufacturer Part #: NX3008CBKS,115
RoHS 10 Compliant

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV
  • AEC-Q101 qualified

Technical Attributes

Find Similar Parts
Description Value
Qualification AEC-Q101
Drain Source Voltage Vds N Channel 30 V
Power Dissipation N Channel 320 mW
Product Range Trench Series
Continuous Drain Current Id N Channel 350 mA
Drain Source On State Resistance N Channel 1.4 Ohm
Power Dissipation P Channel 320 mW
Continuous Drain Current Id P Channel 200 mA
Drain Source On State Resistance P Channel 4.1 Ohm
Channel Type Complementary
Transistor Case Style SOT-363
Operating Temperature Max 150 °C
Drain Source Voltage Vds P Channel 30 V
MSL Level MSL 1 - Unlimited
No. of Pins 6

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541210095
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