Manufacturer:
onsemi
NTMFS5C670NLT1G
Power MOSFET, N Channel, 60 V, 71 A, 6.1 Milliohms, DFN, 5 Pins, Surface Mount
Avnet Manufacturer Part #:
NTMFS5C670NLT1G
RoHS 10 Exempt
NTMFS5C670NLT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
Key Features
- Continuous drain current is 71A
- Power dissipation is 61W at (TC = 25°C)
- Drain-to-source breakdown voltage is 60V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Threshold temperature coefficient is -4.7mV/°C typical at (TJ = 25°C)
- Input capacitance is 1400pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Turn-on delay time is 11ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
- Rise time is 60ns typical at (VGS = 4.5V, VDS = 30V, ID = 35A, RG = 2.5 ohm)
- Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
- Junction temperature range from -55°C to +175°C, DFN5 package
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Gate Source Threshold Voltage Max | 2 V |
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No. of Pins | 5 |
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Operating Temperature Max | 175 |
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Rds(on) Test Voltage | 10 |
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Power Dissipation | 61 W |
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Drain Source On State Resistance | 6.1 mOhm |
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Continuous Drain Current Id | 71 A |
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Transistor Mounting | Surface Mount |
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Transistor Case Style | DFN |
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Channel Type | N |
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MSL Level | MSL 1 - Unlimited |
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Drain Source Voltage Vds | 60 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |