Manufacturer:
onsemi
NSS1C200MZ4T1G
Trans GP BJT PNP 100V 3A 4-Pin(3+Tab) SOT-223 T/R
Avnet Manufacturer Part #:
NSS1C200MZ4T1G
RoHS 10 Exempt
Low V Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage V and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Key Features
- High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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Transistor Mounting | Surface Mount |
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Power Dissipation | 2 |
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Transition Frequency | 120 |
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DC Current Gain hFE Min | 150 |
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MSL Level | MSL 1 - Unlimited |
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Collector Emitter Voltage Max | 100 |
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No. of Pins | 4 |
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Continuous Collector Current | 2 |
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Transistor Polarity | PNP |
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Transistor Case Style | SOT-223 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| ON-PB21344X PCN | EOL-Documentation | 20160109 | |
| ON-PB21344X PCN | Other-Documents | 20160109 |