NJVMJD31CT4G by onsemi Single Bipolar Transistors | Avnet Asia Pacific

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NJVMJD31CT4G

Trans GP BJT NPN 40V 3A 3-Pin DPAK T/R

NJVMJD31CT4G in Single Bipolar Transistors by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: NJVMJD31CT4G
RoHS 10 Exempt

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Key Features

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("1G"Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

Technical Attributes

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Description Value
Power Dissipation 1
Transistor Mounting Surface Mount
Qualification AEC-Q101
Transistor Polarity NPN
Operating Temperature Max 150 °C
Transition Frequency 100
Continuous Collector Current 100
DC Current Gain hFE Min 120
Collector Emitter Voltage Max 50
Transistor Case Style X1-DFN1006
No. of Pins 3

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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