Manufacturer:
onsemi
NDS352AP
Power MOSFET, P Channel, 30 V, 900 mA, 0.25 ohm, SuperSOT, Surface Mount
Avnet Manufacturer Part #:
NDS352AP
RoHS 10 Compliant
The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Key Features
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Channel Type | P |
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Rds(on) Test Voltage | 10 |
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No. of Pins | 3 |
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Transistor Case Style | SOT-23 |
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Drain Source Voltage Vds | 30 |
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Transistor Mounting | Surface Mount |
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Power Dissipation | 500 |
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Drain Source On State Resistance | 300 |
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Continuous Drain Current Id | 900 |
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MSL Level | MSL 1 - Unlimited |
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Operating Temperature Max | 150 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| NDS352AP MOLDED PACKAGE, SUPERSOT, 3 LEAD | Part-Block-Diagram | 20131022 |