Manufacturer:
onsemi
NDS0610
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount
Avnet Manufacturer Part #:
NDS0610
RoHS 10 Compliant
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Key Features
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Technical Attributes
Find Similar Parts|
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Description | Value |
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No. of Pins | 3 |
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Operating Temperature Max | 150 °C |
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Channel Type | P Channel |
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Transistor Case Style | SOT-23 |
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Rds(on) Test Voltage | 10 |
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Continuous Drain Current Id | 120 mA |
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Drain Source On State Resistance | 10 Ohm |
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Power Dissipation | 360 mW |
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Gate Source Threshold Voltage Max | 3.5 V |
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Drain Source Voltage Vds | 60 V |
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MSL Level | MSL 1 - Unlimited |
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Transistor Mounting | Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| NDS0610 3LD, SOT23, JEDEC TO-236, LOW PROFILE | Part-Block-Diagram | 19940307 | |
| FAI-P5CAAA PCN | EOL-Documentation | 20160109 |