Manufacturer:
onsemi
NCV8402ASTT3G
Power MOSFET, N Channel, 42 V, 2.37 A, 0.165 ohm, SOT-223, Surface Mount
Avnet Manufacturer Part #:
NCV8402ASTT3G
RoHS 10 Exempt
NCV8402ASTT3G is a three-terminal protected low−side smart discrete device. The protection features include overcurrent, overtemperature, ESD and integrated drain−to−gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. The application includes switch a variety of resistive, inductive and capacitive loads, can replace electromechanical relays and discrete circuits, automotive/industrial.
Key Features
- Short−circuit protection, thermal shutdown with automatic restart
- Overvoltage protection, integrated clamp for inductive switching
- ESD protection, dV/dt robustness, analogue drive capability (logic level input)
- AEC-Q101 qualified and PPAP capable, gate input current is 50µA typ at (VDS = 0V, VGS = 5V)
- Slew−rate ON (70% to 50% VDD) is 0.8µVs typ at (VGS = 10V, VDD = 12V, ID = 2.5A, RL = 4.7 ohm)
- Current limit is 4.3A typical at (VDS = 10V, VGS = 5.0V, TJ = 25°C)
- Source−drain forward on voltage is 1V typ at (VGS = 0V, IS = 7A)
- Gate threshold temperature coefficient 4mV/°C typical at (TJ = 25°C)
- Operating junction temperature range from -40°C to +150°C
- SOT−223 package
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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No. of Pins | 4 |
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Continuous Drain Current Id | 2 |
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Drain Source Voltage Vds | 42 |
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MSL Level | MSL 1 - Unlimited |
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Channel Type | N |
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Drain Source On State Resistance | 200@10V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| ON-PB21344X PCN | EOL-Documentation | 20160109 | |
| ON-PB21344X PCN | Other-Documents | 20160109 |