MTA9ASF1G72HZ-3G2R1 by Micron Uncategorized | Avnet Asia Pacific

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MTA9ASF1G72HZ-3G2R1

RAM Memory Module, 8 GB, 1600 MHz, PC4-3200, 260-Pin DDR4 SDRAM SO-DIMM, Notebook SODIMM

Micron
Manufacturer: Micron
Product Category: Uncategorized
Avnet Manufacturer Part #: MTA9ASF1G72HZ-3G2R1
RoHS 6 Compliant

MTA9ASF1G72HZ-3G2R1 is a high-speed DDR4 SDRAM module. DDR4 SDRAM module benefits from the DDR4 SDRAM's use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bit-wide, four-clock data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR4 modules use two sets of differential signals: DQS_t and DQS_c to capture data and CK_t and CK_c to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.

Key Features

  • Supports ECC error detection and correction
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR), data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration, single-rank, 16 internal banks, 4 groups of 4 banks each
  • On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF), gold edge contacts, fly-by topology
  • Terminated control, command, and address bus
  • 8GB module density, 1 Gig x 72 configuration, 25.6GB/s module bandwidth
  • 260-pin DIMM package, 0°C ≤ TOPER ≤ 95°C commercial operating temperature

ECCN / UNSPSC / COO

Description Value
ECCN: 4A994.a
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