MT28EW01GABA1LPC-0SIT by Micron Flash Memory | Avnet Asia Pacific

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MT28EW01GABA1LPC-0SIT

Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, 64M x 16bit, CFI, 64 Pins, LBGA

Micron
Manufacturer: Micron
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MT28EW01GABA1LPC-0SIT
RoHS 10 Compliant

Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, 64M x 16bit, CFI, 64 Pins, LBGA

Key Features

  • Single-level cell (SLC) process technology
  • Program/erase suspend and resume capability
    • Read from another block during a PROGRAM SUSPEND operation
    • Read or program another block during an ERASE SUSPEND operation
  • Unlock bypass, block erase, chip erase, and write to buffer capability
  • BLANK CHECK operation to verify an erased block
  • CYCLIC REDUNDANCY CHECK (CRC) operation to verify a program pattern
  • VPP/WP# protection
    • Protects first or last block regardless of block protection settings
  • Software protection
    • Volatile protection
    • Nonvolatile protection
    • Password protection
  • Extended memory block
    • Programmed or locked at the factory or by the customer
  • JESD47-compliant
    • 100,000 (minimum) ERASE cycles per block
    • Data retention: 20 years (TYP)
  • RoHS-compliant, halogen-free packaging

Technical Attributes

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Description Value
IC Case / Package LBGA
Operating Temperature Max 85 °C
Flash Memory Type Parallel NOR
Supply Voltage Min 2.7 V
Supply Voltage Nom 3 V
Access Time 95 ns
Product Range 3V Parallel NOR Flash Memories
Memory Configuration 128M x 8bit, 64M x 16bit
Operating Temperature Min -40 °C
IC Mounting Surface Mount
Memory Density 1 Gbit
Supply Voltage Max 3.6 V
Interfaces CFI, Parallel
No. of Pins 64

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.1.a
SCHEDULE B: 8542320070
HTSN: 8542320071
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