Manufacturer:
onsemi
MMBT5551LT3G
Transistor, NPN, 160 V, 0.6 A, 150 DEG C, 0.225 W, SOT-23
Avnet Manufacturer Part #:
MMBT5551LT3G
RoHS 10 Compliant
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Key Features
- Collector − Emitter Breakdown Voltage 160 V
- Miniature SOT-23 Surface Mount Package Saves Board Space >
- Pb−Free Devices are available
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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MSL Level | MSL 1 - Unlimited |
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Power Dissipation | 300 |
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Transistor Mounting | Surface Mount |
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Transistor Case Style | SOT-23 |
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No. of Pins | 3 |
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Transistor Polarity | NPN |
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Collector Emitter Voltage Max | 160 |
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DC Current Gain hFE Min | 80 |
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Continuous Collector Current | 600 |
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Operating Temperature Max | 150 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |