MJD31CQ-13 by Diodes Incorporated Single Bipolar Transistors | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

MJD31CQ-13

Trans GP NPN 100V 3A 3-Pin TO-252 T/R

MJD31CQ-13 in Single Bipolar Transistors by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: MJD31CQ-13
RoHS 10 Compliant

Trans GP NPN 100V 3A 3-Pin TO-252 T/R

Technical Attributes

Find Similar Parts
Description Value
MSL Level MSL 1 - Unlimited
Operating Temperature Max 150
Collector Emitter Voltage Max 100
Transition Frequency 3
DC Current Gain hFE Min 25
Continuous Collector Current 3
Transistor Case Style TO-252 (DPAK)
Transistor Mounting Surface Mount
No. of Pins 3
Transistor Polarity NPN
Power Dissipation 3.9

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: 8541210080
HTSN: 8541290095
CLEAR ALL Compare (0/10)